Flash EEPROM system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks

ABSTRACT

A non-volatile memory system is formed of floating gate memory cells arranged in blocks as the smallest unit of memory cells that are erasable together. The system includes a number of features that may be implemented individually or in various cooperative combinations. One feature is the storage in separate blocks of the characteristics of a large number of blocks of cells in which user data is stored. These characteristics for user data blocks being accessed may, during operation of the memory system by its controller, be stored in a random access memory for ease of access and updating. According to another feature, multiple sectors of user data are stored at one time by alternately streaming chunks of data from the sectors to multiple memory blocks. Bytes of data in the stream may be shifted to avoid defective locations in the memory such as bad columns. Error correction codes may also be generated from the streaming data with a single generation circuit for the multiple sectors of data. The stream of data may further be transformed in order to tend to even out the wear among the blocks of memory. Yet another feature, for memory systems having multiple memory integrated circuit chips, provides a single system record that includes the capacity of each of the chips and assigned contiguous logical address ranges of user data blocks within the chips which the memory controller accesses when addressing a block, making it easier to manufacture a memory system with memory chips having different capacities. A typical form of the memory system is as a card that is removably connectable with a host system but may alternatively be implemented in a memory embedded in a host system. The memory cells may be operated with multiple states in order to store more than one bit of data per cell.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of application Ser. No. 11/679,012,filed on Feb. 26, 2007, now U.S. Pat. No. 7,362,613, which is acontinuation of application Ser. No. 11/323,576, filed Dec. 29, 2005,now U.S. Pat. No. 7,184,306, issued on Feb. 27, 2007, which is acontinuation of application Ser. No. 10/841,406, filed May 6, 2004, nowU.S. Pat. No. 6,996,008, issued on Feb. 7, 2006, which is a continuationof application Ser. No. 10/422,216, filed Apr. 23, 2003, now U.S. Pat.No. 6,760,255, issued on Jul. 6, 2004, which is a continuation ofapplication Ser. No. 10/176,880, filed Jun. 21, 2002, now U.S. Pat. No.6,580,638, issued on Jun. 17, 2003, which is a continuation of Ser. No.09/505,555, filed Feb. 17, 2000, now U.S. Pat. No. 6,426,893, issued onJul. 30, 2002, which applications are incorporated herein in theirentirety by this reference.

BACKGROUND OF THE INVENTION

This invention relates to semiconductor memory systems, particularly tonon-volatile memory systems, and have application to flashelectrically-erasable and programmable read-only memories (EEPROMs).

Flash EEPROM systems are being applied to a number of applications,particularly when packaged in an enclosed card that is removablyconnected with a host system. Current commercial memory card formatsinclude that of the Personal Computer Memory Card InternationalAssociation (PCMCIA), CompactFlash (CF), MultiMediaCard (MMC) and SecureDigital (SD). One supplier of these cards is SanDisk Corporation,assignee of this application. Host systems with which such cards areused include personal computers, notebook computers, hand held computingdevices, cameras, audio reproducing devices, and the like. Flash EEPROMsystems are also utilized as bulk mass storage embedded in host systems.

Such non-volatile memory systems include an array of floating-gatememory cells and a system controller. The controller managescommunication with the host system and operation of the memory cellarray to store and retrieve user data. The memory cells are groupedtogether into blocks of cells, a block of cells being the smallestgrouping of cells that are simultaneously erasable. Prior to writingdata into one or more blocks of cells, those blocks of cells are erased.User data are typically transferred between the host and memory array insectors. A sector of user data can be any amount that is convenient tohandle, preferably less than the capacity of the memory block, oftenbeing equal to the standard disk drive sector size, 512 bytes. In onecommercial architecture, the memory system block is sized to store onesector of user data plus overhead data, the overhead data includinginformation such as an error correction code (ECC) for the user datastored in the block, a history of use of the block, defects and otherphysical information of the memory cell block. Various implementationsof this type of non-volatile memory system are described in thefollowing United States patents and pending applications assigned toSanDisk Corporation, each of which is incorporated herein in itsentirety by this reference: U.S. Pat. Nos. 5,172,338, 5,602,987,5,315,541, 5,200,959, 5,270,979, 5,428,621, 5,663,901, 5,532,962,5,430,859 and 5,712,180, and application Ser. No. 08/910,947, filed Aug.7, 1997, now U.S. Pat No. 6,222,762, and Ser. No. 09/343,328, filed Jun.30, 1999, now U.S. Pat No. 6,151,248. Another type of non-volatilememory system utilizes a larger memory cell block size that storesmultiple sectors of user data.

One architecture of the memory cell array conveniently forms a blockfrom one or two rows of memory cells that are within a sub-array orother unit of cells and which share a common erase gate. U.S. Pat. Nos.5,677,872 and 5,712,179 of SanDisk Corporation, which are incorporatedherein in their entirety, give examples of this architecture. Althoughit is currently most common to store one bit of data in each floatinggate cell by defining only two programmed threshold levels, the trend isto store more than one bit of data in each cell by establishing morethan two floating-gate transistor threshold ranges. A memory system thatstores two bits of data per floating gate (four threshold level rangesor states) is currently available, with three bits per cell (eightthreshold level ranges or states) and four bits per cell (sixteenthreshold level ranges) being contemplated for future systems. Ofcourse, the number of memory cells required to store a sector of datagoes down as the number of bits stored in each cell goes up. This trend,combined with a scaling of the array resulting from improvements in cellstructure and general semiconductor processing, makes it practical toform a memory cell block in a segmented portion of a row of cells. Theblock structure can also be formed to enable selection of operation ofeach of the memory cells in two states (one data bit per cell) or insome multiple such as four states (two data bits per cell), as describedin SanDisk Corporation U.S. Pat. No. 5,930,167, which is incorporatedherein in its entirety by this reference.

Since the programming of data into floating-gate memory cells can takesignificant amounts of time, a large number of memory cells in a row aretypically programmed at the same time. But increases in this parallelismcauses increased power requirements and potential disturbances ofcharges of adjacent cells or interaction between them. U.S. Pat. No.5,890,192 of SanDisk Corporation, which is incorporated herein in itsentirety, describes a system that minimizes these effects bysimultaneously programming multiple chunks of data into different blocksof cells located in different operational memory cell units(sub-arrays).

SUMMARY OF THE INVENTION

There are several different aspects of the present invention thatprovide improvements in solid state memory systems, including thosedescribed above. Each of these aspects of the present invention, themajor ones being generally and briefly summarized in the followingparagraphs, may be implemented individually or in various combinations.

Multiple user data sectors are programmed into a like number of memoryblocks located in different units or sub-arrays of the memory array byalternately streaming data from one of the multiple sectors at a timeinto the array until a chunk of data is accumulated for each of multipledata sectors, after which the chunks are simultaneously and individuallystored in respective blocks in different units of the memory. Thisincreases the number of memory cells that may be programmed in parallelwithout adverse effects.

An error correction code (ECC), or other type of redundancy code, may begenerated by the controller from the streaming user data duringprogramming and written into the same memory block as the user data fromwhich it is generated. The redundancy code is then evaluated by thecontroller when the sector of data is read out of the memory block. Asingle redundancy code generation circuit is utilized, even when thestreaming data is alternated between data chunks of the multiplesectors, by providing a separate storage element for each of the userdata sectors being programmed at the same time, in which intermediateresults of the generation are temporarily stored for each sector.

Overhead data of the condition, characteristics, status, and the like,of the individual blocks are stored together in other blocks provided inthe array for this purpose. Each overhead data record may include anindication of how many times the block has been programmed and erased,voltage levels to be used for programming and/or erasing the block,whether the block is defective or not, and, if so, an address of asubstitute good block, and the like. A group of blocks are devoted tostoring such records. A large number of such records are stored in eachof these overhead blocks. When accessing a specific user data block toperform one or all of programming, reading or erasing, the overheadrecord for that user data block is first read and its information usedin accessing the block. By storing a block's overhead data outside ofthat block, frequent rewriting of the overhead data, each time the userdata is rewritten into the block, is avoided. It also reduces the amountof time necessary to access and read the block overhead data when theblock is being accessed to read or write user data. Further, only oneECC, or other redundancy code, need be generated for the large number ofoverhead records that are stored in this way.

The records from a number of overhead blocks can be read by thecontroller into an available portion of its random-access memory forease of use, with those overhead blocks whose records have not beenaccessed for a time being replaced by more active overhead blocks in acache-like manner. When a beginning address and number of sectors ofdata to be transferred is received by the memory controller from thehost system, a logical address of the first memory block which is to beaccessed is calculated in order to access the overhead record for thatblock but thereafter the overhead records are accessed in order withouthaving to make a calculation of each of their addresses. This increasesthe speed of accessing a number of blocks.

Information of defects in the memory, such as those discovered duringthe manufacturing process, may also be stored in separate blocks devotedfor this purpose and used by the controller so that the imperfect memorycircuit chips may be included in the memory system rather thandiscarding them. This is particularly an advantage when a single defectrecord affects many blocks. One such defect is a bad column that isshared by a large number of blocks. A number of bad column pointers(BCPs) may be stored together as a table in one or more sectors that aredevoted in part or entirely to this overhead data. When this is done,the physical location of the streaming user data being written to thememory is shifted when a comparison of the relative physical locationwithin a sector of individual bytes of data with the BCP table indicatesthat the data byte is being directed to at least one memory cell that isalong a bad column. The reverse is performed during reading, where databits read from memory cells that were skipped over during write becauseof a bad column are ignored.

Since flash EEPROM cells have, by their nature, a limited life in termsof the number of times that they can be erased and reprogrammed, it isusually prudent to include one or more operational features that tend toeven out the wear on the various memory blocks that can be caused bymultiple rewrites to the same blocks. One such technique alters fromtime-to-time the correspondence between the digital data and the memorystates that are designated to represent the digital data. To accomplishthis in the present memory system, the first one or few bits of theinitial byte of the individual sectors of data, termed herein as a flagbyte, are used to designate such correspondence. These bits aredesignated upon writing user data, and all data following the initialbits are transformed on the fly as the streaming data is beingtransferred to the memory array in accordance with their value. Uponreading a sector of data, these initial bit(s) are read and used totransform back all subsequent data stored in the sector to theiroriginal values as the data are being read out of the memory in astream.

When the memory system is formed of multiple memory cell arrays, such asby using two or more integrated circuit chips that each include such anarray, the system's manufacture and use is simplified by accumulatinginformation about each of the memory arrays in the system, and thenstoring that information as a single record in some convenient location,such as in one of the blocks of one of the memory arrays. This makes itmuch easier to combine memory arrays having different sizes and/oroperating characteristics into a single system. One such record mergesthe number of blocks of user data available in each of the memory chipsin a way that establishes a continuum of logical block addresses of theblocks of all the arrays in the system. When a location of memory isbeing accessed for a read or write operation, the memory controller thenaccesses the merged record in a process of converting a logical blockaddress to a physical address of a block in one of the memory arrays.

Such a merged record can be automatically generated and stored duringmanufacturing by the controller reading the information from each of thememory arrays, merging that information into a single record, and thenwriting that record into a designated block of one of the memory arrays.Currently, the memory controller is usually provided on a separateintegrated circuit chip, with one or more memory cell array chipsconnected with the controller. It is contemplated, in light ofcontinuing processing technology improvements, that a memory array canalso be included on the controller chip. When that amount of memory isinsufficient for a particular system, one or more additional circuitchips containing further memory array(s) are then utilized. When two ormore physically separate arrays of included in a system, then thegeneration of the merged record simplifies operation of the controllerto address blocks across multiple arrays.

Other characteristics of various memory array circuit chips used to forma system, such as optimal voltage ranges, timing, numbers of pulsesused, characteristics of voltage pumps, locations of overhead blocks,and the like, can vary without adverse effects. These operatingcharacteristics can also be tabulated into a single system file foraccess by the micro-controller, or, more conveniently, themicro-controller can be operated to first access those of suchcharacteristics as are necessary from an individual memory array chipbefore accessing that chip to read or write data. In either case, thisallows the memory system to be formed with memory chips having differentcharacteristics without any degradation in its performance. Themanufacturing of non-volatile memory systems is simplified since all thememory array chips in a system need not be the selected to be the same.

Additional aspects, features and advantages of the present invention areincluded in the following description of specific embodiments, whichdescription should be taken in conjunction with the accompanyingdrawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block schematic diagram of an example non-volatile memorysystem in which various aspects of the present invention may beimplemented;

FIG. 2 is a more detailed schematic diagram of one of the memory cellarray units, with associated logic and buffers, of the system of FIG. 1;

FIGS. 3A and 3B illustrate four state and two state operation,respectively, of the individual memory cells of the system of FIG. 1;

FIG. 4 is an example of the content and structure of data stored in oneof the memory blocks of the system of FIG. 1;

FIG. 5 illustrates streaming data transfer during programming ofmultiple sectors of data at one time within the memory system of FIG. 1;

FIG. 6A is a schematic block diagram of the circuit of the system ofFIG. 1 that utilizes bad column pointers (BCP) and generates an errorcorrection code (ECC), or other data redundancy code, with themulti-sector streaming data being transferred to the memory cell array;

FIG. 6B is a schematic diagram of the ECC generation block of FIG. 6A;

FIG. 6C is a schematic diagram of the BCP processing block of FIG. 6A;

FIG. 7 illustrates the manner in which data from multiple sectors istransferred to the memory cell array;

FIG. 8 illustrates an example data structure of block overhead datarecords;

FIG. 9 shows an example of an overhead data record of FIG. 8 for a goodmemory cell block;

FIG. 10 shows an example of an overhead data record of FIG. 8 for adefective memory cell block;

FIG. 11 illustrates an example data structure of a reserved block thatstores records of defects of the memory cell array, namely the locationof bad columns, of the system of FIG. 1;

FIG. 12 shows an example of the physical partitioning of the memoryarray of FIG. 1 into units and blocks of memory cells, and the data thatis designated to be stored in them;

FIG. 13 schematically illustrates a method of forming a merged record ofthe characteristics of multiple memory integrated circuit chips of thesystem of FIG. 1;

FIG. 14 shows an example of a merged record formed in the mannerillustrated in FIG. 13;

FIG. 15 illustrates an example of bit fields of the flag byte of thedata sector of FIG. 4;

FIG. 16 schematically shows generation and use of the bit fields of theflag byte of FIG. 15 during writing of data in the memory; and

FIG. 17 schematically shows use of the bit fields of the flag byte ofFIG. 15 during reading of data from the memory.

DESCRIPTION OF REPRESENTATIVE EMBODIMENTS

FIG. 1 provides a diagram of the major components of a non-volatilememory system that are relevant to the present invention. A controller11 communicates with a host system over lines 13. The controller 11,illustrated to occupy one integrated circuit chip, communicates overlines 15 to one or more non-volatile memory cell arrays, three arrays17, 19 and 21 being illustrated, each of the arrays usually formed onone or more separate integrated circuit chips. The illustratedcontroller is usually contained on a single integrated circuit chip,either without a flash EEPROM array (the example shown) or with a memorycell array. Even if a memory cell array is included on the controllercircuit chip, an additional one or more chips that each contain only amemory array and associated circuitry will often be included in thesystem.

User data is transferred between the controller 11 and multiple memoryarrays 17, 19 and 21, in this example, over the lines 15. The memoryarrays are individually addressed by the controller. Specifically, thedata bus within the lines 15 can be one byte wide. The memory systemshown in FIG. 1 can be embedded as part of a host system or packagedinto a card, such as a card following one of the card standardspreviously mentioned. In the case of a card, the lines 13 terminate inexternal terminals on the card for mating with a complementary socketwithin a host system. Although use of one controller chip and multiplememory chips is typical, the trend is, of course, to use fewer separatechips for such a system by combining their circuits. An example capacityof one of the illustrated memory chips is 256 Mbits, thus requiring onlytwo such memory chips, plus the controller chip, to form a non-volatilememory system having a data capacity of 64 megabytes. Use of a singlesmaller capacity memory chip results in a memory system of lessercapacity, an 8 megabyte system being a marketable example. Conversely,use of memory chips with a higher bit storage density and/or use of morememory array chips in a system will result in a higher capacity memory.Such memory systems up to 1.3 gigabyte and more are possible.

The controller 11 includes a micro-processor or micro-controller 23connected through controller interface logic 25 to internal memories andinterfaces with external components. A program memory 27 stores thefirmware and software accessed by the micro-controller 23 to control thememory system operation to read data from the connected memory array(s)and transmit that data to the host, to write data from the host to thememory chip(s), and to carry out numerous other monitoring andcontrolling functions. The memory 27 can be a volatile re-programmablerandom-access-memory (RAM), a non-volatile memory that is notre-programmable (ROM), a one-time programmable memory (OTP) or are-programmable flash EEPROM system. If the memory 27 isre-programmable, the controller can be configured to allow the hostsystem to program it. A random-access-memory (RAM) 29 is used to store,among other data, data from tables read from the non-volatile memorythat are accessed during reading and writing operations.

A logic circuit 31 interfaces with the host communication lines 13,while another logic circuit 33 interfaces with the memory array(s)through the lines 15. Another memory 35 is used as a buffer totemporarily store user data being transferred between the host systemand non-volatile memory. The memories in the controller are usuallyvolatile, since memories with fast access and other characteristicsdesired for efficient controller access have that characteristic, andmay be combined physically into a single memory. A dedicated circuit 36accesses the streaming user data being transferred to the memory andinserts dummy bytes into the data stream in order to avoid writing validuser data to memory cells in bad columns. A dedicated processing circuit37 also accesses the streaming user data being transferred between thecontroller and flash interfaces 25 and 33 for generating an ECC, orother type of redundancy code, based upon the user data. When user datais being transferred into the non-volatile memory, the generated ECC isappended onto the user data and simultaneously written into the samephysical block of the non-volatile memory as part of the same sector asthe user data. The circuits 36 and 37 are described further below, withrespect to FIGS. 6A-C.

The non-volatile memory chip 17 includes a logic circuit 39 forinterfacing with the controller through the lines 15. Additionalcomponents of the memory chip are not shown for simplicity inexplanation. The purpose of the logic circuit 39 is to generate signalsin separate buses and control lines. Various control signals areprovided in lines 41 and a power supply 43 to the memory array circuitsis also controlled through the interface 39. A data bus 45 carries userdata being programmed into or read from the non-volatile memory, and anaddress bus 47 carries the addresses of the portion of the memory beingaccessed for reading user data, writing user data or erasing blocks ofmemory cells.

The floating gate memory cell array of a single non-volatile memory chipis itself divided into a number of units that each have its own set ofsupporting circuits for addressing, decoding, reading and the like. Inthis example, eight such array units 0-7, denoted by reference numbers51-58, are illustrated. Physically, as an example, the memory array on asingle chip is divided into quadrants, each quadrant including two unitsthat are in part connected together and share a common word linedecoding circuit (y-decode), such as a y-decoder 61 between memory cellunits 4 (55) and 5 (56). This memory architecture is similar to thatdescribed in aforementioned U.S. Pat. No. 5,890,192, except there areeight units instead of the four units (quads) illustrated in thatpatent.

Each of the array units has a bit line decoder (x-decode), such asx-decoder 63 connected to the array unit 5 (56), through which user datais read. FIG. 2 is an expanded view of the array unit 5 and its decoders61 and 63 that respond to addresses on the address bus 47. Connected tothe decoder 63 is a circuit 65 that contains sense amplifiers forreading data, a register for storing data being programmed, comparatorsused during programming to determine whether addressed cells in the unit5 have been programmed to the desired state and during reading todetermine the states of the cells being read, and control logic to carryout these functions. Two registers 67 and 69 are connected for paralleltransfer of user data between them during reading (from 67 to 69) andprogramming (from 69 to 67). User data is transferred from the data bus45 and the register 69, one byte at a time, during writing and in theother direction during reading. Each of the other seven array units aresimilarly connected.

Referring specifically to FIG. 2, a portion of an example memory cellarray is generally described with respect to the array unit 5. Each rowof cells has its own conductive word line (WL) connected through thedecoder 61 to corresponding word lines of the adjacent array unit 4.Each of two partial rows 70 and 76 of respective floating gate memorycells 71-75 and 77-81, for example, has its own respective word line 83and 85. A word line is connected to a gate of each of the cells in asingle row, the connected gate being a select gate in a memory cellhaving a split channel type of structure. Other memory cell structurescan be used instead, each having at least one electrically floating gateupon which a level of stored charge is a measure of the state of thecell. A conductive erase line is provided between every other row ofmemory cells, the line 87 being connected to erase gates of each of thememory cells of each of the rows 70 and 76. Alternate structures do noterase the floating gates to a separate erase gate but rather erase to aregion of the substrate such as the cell source diffusions. Bit lines(BL) extend in an orthogonal direction to the word lines, one bit linebetween each column of array cells, and are connected to the decoder 63.Each bit line is connected to the source and drain diffusions of each ofthe cells of the columns on either side of the bit line. Detailedexamples of suitable memory arrays are described in the U.S. patentslisted in the Background section above but other existing and proposedstructures can alternatively be employed in implementations of thepresent invention.

A block of cells is formed, in the array example being described, fromeach pair of rows that surround an erase gate, such as the rows 70 and76 of the array unit 5 (FIG. 2) on either side of the erase gate 87,when operating each floating gate in four defined threshold voltagestates in order to store two bits of data per floating gate. This isillustrated more generally in FIG. 3A, where the block formed of rows 70and 76 contains a sector's worth of data from the host, plus someoverhead information about that data. In a very specific example, theindividual blocks are sized to have a capacity of 528 bytes in order tostore one 512 byte sector of data, some overhead information about thedata and provide some spare bytes, as illustrated in FIG. 4. When eachfloating gate is capable of storing two bits of data, as is the caseillustrated in FIG. 3A, each block contains 264 floating gates, or 132in each of the block's two rows. If the memory cell structure has onefloating gate per cell formed between source and drain diffusions, then132 cells are included in each row of each one of the units. But if thecells each have two floating gates, then only 66 cells are necessary ineach row.

If, rather than storing two bits of data per floating gate, only one bitis stored per floating gate, twice the number of cells are needed foreach operable block. This can be accomplished, in effect, by doublingthe length of each row in a manner illustrated in FIG. 3B. The rows 70and 76 are extended to include the respective rows 70′ and 76′ of theadjacent unit 4 with which unit 5 is paired. The word line of row 70′ ofthe unit 4 is connected through the decoder 61 to the word line of therow 70 of the unit 5, and the word line of the row 76 is connected tothe row 76′ of unit 5. When a given row's word line is addressed, bothcomponents of the word line, in adjacent units 4 and 5, are addressedtogether. The common erase gate for the rows 70 and 76 is also connectedthrough the decoder 61 to a common erase gate for the rows 70′ and 76′,in order to cause all of the cells formed of the enlarged block of cellsof the rows 70, 70′, 76 and 76′ to be erased together. Therefore, whenoperating the memory array floating gates with only two thresholdstates, the eight units of the array being described are reduced to fouroperating quadrants that are each formed of adjacent pairs of units(0-1, 2-3, 4-5 and 6-7). This allows the memory array of FIG. 1 to beoperated in either of two or four states, according to a command set bythe manufacturer, when a proper set of reference threshold levels arealso set for program-verify and reading in each unit's circuits 65.

As an alternative to the two state configuration shown in FIG. 3B, asingle block may be formed of rows that are all within a single unit,such as four rows that are contiguous with each other.

Data is preferably transferred in chunks between the controller buffermemory 35 (FIG. 1) and an addressed block of the array memory cells. Ina specific example, each chunk contains 66 bytes of data. A chunk ofdata is programmed to the cells in an addressed block, one time inparallel. When operating in four states, chunks of data 91-94 are storedin one row of a typical block (FIG. 3A), and chunks of data 97-100 arestored in the second row of cells of that block. When the memory isoperated in two states, individual chunks of data 91′-94′ are stored oneof the extended rows of cells (FIG. 3B), and chunks 97′-100′ in theother row of the expanded block of cells that extends across twoadjacent units.

Rather than transferring a chunk of user data in parallel between thebuffer memory 35 and one of the memory arrays, a data bus within thelines 15 is designed to carry only a few bits data in parallel, one bytein a specific example. This reduces the number of lines 15 that arenecessary and, more importantly, reduces the number of user data padsthat need to be included on each of the memory array chips in thesystem. With one byte being transferred at a time, there thus needs tobe 66 such transfers for a each chunk. These byte wide user datatransfers extend between the buffer memory 35 and, through interfacecircuits 33 and 39, the memory cell array master register 69, if a blockwithin the array unit 5 is being addressed, or another of the arraymaster registers associated with another unit if a block within thatother unit is being addressed.

During programming, bytes of a sector of user data received from thehost system are successively transferred into the memory array masterregister one at a time until a chunk of data has been accumulated, andthen the chunk is transferred in parallel to the slave register (such asregister 67 for the array unit 5). As the chunk is being transferred outof the master register and into the slave register, bytes of the nextchunk of the sector are being transferred into the master register.Chunks are transferred in parallel, one at a time from the slaveregister, to programming and verifying circuits (circuit 65 for thearray unit 5), which causes the a number of memory cells of an addressedblock of the associated array unit to be programmed to their respectivetarget threshold levels. The loading of one chunk into the masterregister preferably overlaps programming of the previous chunk of datafrom the slave register by the programming and verifying circuits.

During reading, the process is reversed, memory cell threshold valuesrepresentative of a chunk of data being read one at a time from one ofthe array units into its reading circuit (circuit 65 for the array unit5) where the stored values are converted into data bits. Thosesuccessive chunks of data are then transferred one at a time into theslave register for the array unit, thereafter in parallel to the masterregister, and then one byte at a time over the lines 15 to the databuffer 35 of the controller for transfer to the host system. As a chunkis being transferred out of the master register and to the controller, anew chunk of data is being transferred into the slave register from theread circuits.

Rather than completing the transfer of chunks of data of one sectorbefore commencing another, it is preferred to alternately transferchunks of multiple sectors between the buffer memory 35 and differentones of the array units 0-7. This is illustrated in FIG. 5, where datafrom four sectors is transferred in a common data stream 101. Memoryarray units A, B, C and D can be any four of the array units 0-7 of thesystem of FIG. 1. Chunks of data A0+, B0+, C0+ and D0+ are shown to betransferred in the data stream 101 from four respective data sectors103, 105, 107 and 109 in the buffer memory 35 to the four differentmemory units A-D. The memory system can, of course, be alternativelydesigned to transfer fewer or more data sectors together to an equalnumber of memory cell units. For simplicity in illustration, each sectoris shown in FIG. 5 to contain only four chunks (chunks A0, A1, A2 and A3for the sector 103, for example), where the system of FIG. 1 has beendescribed above to transfer eight chunks of data for each sector. Theprinciple of operation is the same.

As illustrated in FIG. 5, the data stream 101, being transferred in thedata bus of the lines 15, is formed from successive bytes of a firstchunk A0 of the buffered data sector 103, followed by a first chunk B0of the sector 105, then a first chunk C0 of the sector 107, and then afirst chunk D0 of the sector 109. These chunks are initially stored inthe master registers of the respective units to which the data are beingwritten, transferred in parallel to the slave registers and then writtenin parallel into respective blocks 111, 113, 115 and 117 of the fourmemory cell units A-D. All of the chunks A0, B0, C0 and D0 areprogrammed at the same time into respective memory units A-D, followedby chunks A1, B1, C1 and D1, and so forth. The blocks where chunks ofdata are written either share a common word line 119 or have the samevoltage impressed on the word lines of the addressed blocks. As theinitial chunks of data are being transferred through the registers andprogrammed into the units, subsequent chunks A1, B1, C1 and D1 of thefour data sectors are being transferred to the registers of the units.This is followed, in the data stream 101, by another chunk from each ofthe data sectors 103, 105, 107 and 109, and so forth, until all of thechunks of each of the four buffered data sectors has been programmedinto the memory units A-D.

This programming technique has an advantage that multiple chunks of userdata may be simultaneously programmed into different units of the memoryon a single chip, or, alternatively, into different units spread amongtwo or more memory chips. This is preferred to the simultaneousprogramming of multiple sectors of data into a common block of one unitsince the cells being programmed are, by the technique of FIG. 5,physically and electrically separated further from each other. Thisseparation reduces incidents of disturbing the charge on floating gatesnot intended to be altered. It also spreads out the power supplyrequirements on the chip. The technique of FIG. 5, which operates withmemory blocks formed of contiguously positioned memory cells, is alsopreferred to defining memory blocks in segments across multiple memoryunits in order to simultaneously program multiple segments of the blockwithout causing disturbs and having increased power requirements.

The technique of FIG. 5 has been described with the assumption that allof the multiple data sectors, four in that example, are written in fullinto the controller buffer 35 before transfer of their data in chunks tothe flash memory is commenced. But this transfer can be commencedearlier if all four of the data sectors are being simultaneously writteninto the buffer memory 35, as can be done with the higher data transferrates between the controller 11 and the host system. Alternatively, someadditional parallelism can be included by loading the four data sectors103, 105, 107 and 109 into the buffer memory 35 in a time shiftedmanner, such as by loading data of the chunk B0 from the sector 105after the chunk of data A0 has been written and while it is being readout into the data stream 101, and so forth down the line through thedata sectors 107 and 109. The data sectors are then loaded into thebuffer 35 with a time shift of that necessary to load one chunk of suchdata. The generation of chunks of data within the stream 101 then needsto wait for only the first chunk of each data sector to be loaded intothe buffer 35.

FIG. 6A is a block diagram of a circuit that may be included as part ofthe controller 11 of the FIG. 1 memory system in the path of user databeing transferred in a stream between the interfaces 25 and 33 duringboth programming and reading. These circuits participate in carrying outthe method described with respect to FIG. 5, and also generates andinserts into the data stream an ECC from the data being programmed (ECCgeneration 37) and make use of the BCPs to avoid writing user data tomemory cells within bad columns (BCP processing 36). Themicro-controller 23 addresses the buffer memory 109, one byte at a timein a predefined sequence. That sequence is altered by circuits 104 and106 in response to a signal in a line 108 that indicates a byte addresswithin the flash memory includes a bad column. A multiplexer 121operates to supply bytes of data from one of sectors A, B, C or D at atime, in response to a control signal in lines 123, as one input toanother multiplexer 125. Chunks of data are preferably read from thedata sectors stored in the buffer memory 35 in the manner describedabove with respect to FIG. 5. A control signal 123 causes themultiplexer 121 to switch from one data sector to the next, in sequence,each time that a chunk's worth of data bytes has been read from thebuffer 35.

The stream of user data bytes at the output of the multiplexer 121 isapplied as one input to a multiplexer 125. The multiplexer 125 normallypasses that data stream from lines 114 through its output to one inputof another multiplexer 112 An exception is when all the user data bytesof a sector have been passed out of the buffer 35, at which time a finalseries of bytes containing an ECC code for the sector of user data isadded onto the end of user data through lines 116. The output of themultiplexer 125 provides the byte wide stream of user data and overheadinformation of the data for writing into physical blocks of thenon-volatile memory.

That stream of user data is normally passed, one byte at a time, throughthe multiplexer 112 to the flash memory. An exception to this is when aBCP hit signal in line 108 is active, indicating that the byte of userdata is being directed to a location of the flash memory that includes abad column. In that case, the address applied to the buffer 35 is notincremented by the micro-controller 23 but rather a fill byte containedin a register 110 is inserted into the data stream instead of the usualbyte of user data. The next byte of user data from the buffer 35 isdelayed until the next transfer cycle when the BCP hit signal isinactive. The bits of the fill byte within the register 110 can bewritten by the micro-controller 23. The output of the multiplexer 112provides the byte wide stream of user data and overhead information ofthe data that is written into physical blocks of the non-volatilememory, as well as possible fill bytes to avoid the effects of badcolumns. The memory system being described can operate without thecircuit of FIG. 6A, or with one of the BCP processing 36 or the ECCgeneration 37 but not both, but it is preferred to include bothfunctions as shown.

Referring to FIG. 6B, additional details of the ECC generation unit 37of FIG. 6A are given. Even though four sectors of data are alternatelybeing transferred in a byte wide data stream from the output of themultiplexer 112 into a single ECC generator circuit 127, the ECCgenerator 37 is able to generate an ECC separately for each data sectorand append the generated code to the end of each sector's data in thelast chunk that is sent to the non-volatile memory array for storage.This is done by use of separate registers 133, 134, 135 and 136 for eachof the four data sectors being sent to the memory array at one time. Aresulting generation is stored in one of these registers by ade-multiplexer 131 or some other effective switching logic. Similarly,the contents of an appropriate one of the registers is connected througha multiplexer 139 as an input to the ECC generation circuit 127. Aftereach byte of data is input to the ECC generation circuit 127 from thebuffer 35, that circuit uses an intermediate result of an ECC generationfor the same respective data sector A, B, C or D that is stored in therespective one of the registers 133-135, along with the new byte ofdata, to generate a new intermediate result that is stored back intothat same register. This use of the registers is controlled by theirinput de-multiplexer 131 and output multiplexer 139, which are caused bythe control signal in lines 123 to step in sequence between registers insynchronism with the data selecting multiplexer 121. A standard ECCalgorithm, such as the Reed-Solomon code, is implemented by thegeneration circuit 127.

In order to pause the ECC generator 127 when fill bytes are beinginserted into the data stream by the BCP processing, the generator 127is disabled by a combination of the BCP hit signal in the line 108 beingactive and a signal in the line 116 indicating that the data at theoutput of the multiplexer 121 is valid. A logic circuit 138 combines thesignals 108 and 116 in order to generate a disable signal for the ECCgenerator 127.

After the ECC generator has received the last byte of data of a sectorbeing stored, the final result is inserted in the last chunk of the datastream by operating the multiplexer 125, in response to a control signalin a line 129, to switch from receiving the input from the multiplexer121 to receiving the result from the ECC generation circuit 127. The ECCis then stored in the same block of the memory array as the sector ofuser data from which it was generated. At the end of generating andinserting ECCs into the data stream for each of a group of four sectorsof data, the registers 133-136 are reset by a signal in a line 141.

Referring to FIG. 6C, additional details of the BCP processing 36 aregiven. A number of bad column pointers (BCPs) for each of the memorysectors being programmed at a particular time are loaded by themicro-controller 23 into registers 118 from a reserved block of theflash memory (described hereinafter with respect to FIG. 11). Four BCPs0-3 are stored for each of the memory units to which the stream 101(FIG. 5) is being directed. That is, all four BCPs 0-3 for each of thesefour units have been Written by the micro-controller 23 from thereserved block into four planes (sets) of registers 118, each set havingfour registers. Each of the planes of registers 118 shown in FIG. 6Ccontains BCPs 0-3 for a different unit. A control signal in a line 123switches between these register planes in order that the BCPs for theunit for which a chunk of data currently in the stream of data from thebuffer 35 through the multiplexer 121 is destined. A multiplexer 120outputs one of the register values to one input of a comparator 132,whose output is the line 108 that contains the BCP hit signal. One offour registers 122 is also included for each of the units for to whichdata of the current stream will be written. Each of the registers 122begins with a count that causes the multiplexer 120 to select BCP0 forits unit. Each time a BCP hit signal in line 108 occurs, circuits 124and 126 causes the BCP count of the appropriate register 122 toincrement by one.

A second input of the comparator 132 is formed from the contents ofregisters 128 and 130. These registers contain the current physicalmemory location for storage of the chunk and byte, respectively, towhich the byte of data at the output of the multiplexer 121 is destinedfor storage within the flash memory. These registers are loaded by themicro-controller 23. Their combined physical memory byte address is thencompared by the comparator 132 with that of one of the BCPs from theregisters 118 of the destination memory unit for that data byte. Whenthe first byte of user data for a given unit is present at the output ofthe multiplexer 121, its physical memory address from registers 128 and130 is compared with BCP0 of the one of the registers 118 for that unit.If there is a positive comparison, then the BCP hit signal in line 108becomes active. This results in the current byte of user data of ECC tobe held and the fill byte from the register 110 inserted instead. Thefill byte will then be written to the byte of memory cells including thebad column, instead of the current data byte.

The BCP hit signal also causes the count in the one of the registers 122for that unit to switch the multiplexer 120 to select the next BCP 1 forthat memory unit. The BCP processor is then ready for this process toagain take place when the physical memory byte location matches that ofthe next in order BCP for that unit. A stalled data byte is writtenduring the next cycle, assuming this next physical address comparisondoes not result in another BCP hit, in which case the data byte isstalled yet another cycle. This process continues until the data streamformed of the current four sectors of data has been transferred to theflash memory, after which the process is repeated for different memorylocations stored in the registers 128 and 130 in which the new sectorsof data are to be written, and possibly changing the BCPs stored in oneor more of the planes of registers 118 if the new data is to be writteninto one or more different memory units than before.

Referring again to FIG. 4, the specification of a block of the memoryarray that stores a sector of data and the ECC is given. As additionaloverhead information, a first byte 145 provides basic information of howthe remaining data is written. This can include, for example, one or twobits that designate the relative values or polarity with which thestored data needs to be read. This is often changed from block to blockand over time, in order to even the wear caused by programming the cellsof a block to one of the programmed states from their erased state(which can also be one of the programmed states). This is describedfurther below with respect to FIGS. 15-17. A next component is data 147which is, for what has been described so far, one sector of user datasupplied by the host system for storage in the non-volatile memorysystem. The component 149 is the ECC was generated from the user data147 during programming, in the manner described above. The number ofcells in the individual blocks is chosen to leave a group 151 of cells,capable of storing 8 bytes in this example, as spares. These spares areshown in FIG. 4 to be at the end of the block when written or read,which is the case if there are no defects in the rest of the block whichrequire use of some or all of these spares. The number of spare bytes151 will be less than what is shown in FIG. 4 by the number of fillbytes that are inserted into the user data 147 by the BCP processing 36to avoid bad columns. The insertion of a fill byte into the user data147 causes subsequent bytes to be delayed by one byte, or moved to theright in the sector data diagram of FIG. 4, thus diminishing the numberof spare bytes 151 at the end of the data stream by one.

The BCP processing and ECC generation circuits of FIGS. 6A-C areoperated in a reverse manner when sectors of data are being read fromthe flash memory, except that an entire sector of data is read beforedata from another sector is read. The ECC generation circuits 37calculate an ECC from the user data in the sectors as that data arepassed one byte at a time through the circuit of FIG. 6A from the flashmemory to the data buffer 35, in the same manner as described above forwriting data. The calculated ECC is then compared with the ECC bytesstored as part of the sector in order to determine whether the sector'suser data is valid or not. The BCP processing identifies bytes in theread stream of data that are fill bytes by comparing the physical memorylocation from which each byte is read with the BCPs for the memory unitis which the sector of data is stored. Those bytes are then eliminatedfrom the read data stream before writing the sector of data into thebuffer memory 35.

Referring to FIG. 7, the programming of data described in FIGS. 4-6 issummarized. The dashed line represents the order of chunks of dataappearing in the data stream 101 generated by the system of FIGS. 1-3for four data sectors A-D, where each sector is transferred in 8 chunks.As can be seen, the first chunks of sectors A, B, C and D appear, inthat order, followed by the second chunks of sectors A, B, C and D, andso forth, until the eighth and final chunks of data sectors A, B, C andD are include. Thereafter, the process is likely repeated with fourdifferent sectors of data.

It will be noted that the overhead information that is stored in a blockalong with a sector of data is limited to information about the dataitself and does not include physical overhead information about theblock or its operation. Prior memory systems, particularly those whichemulate a disk drive by storing 512 byte sectors of user data, have alsostored, in the individual user data blocks, information about theblock's characteristics in terms of experience cycles, numbers of pulsesor voltages required to program or erase the block of cells, defectswithin the block, and like information about the storage media, inaddition to an ECC generated from the data stored in the block. As partof the present invention, however, this type of information about thephysical block is stored in another block. As a specific example,individual block overhead records containing such information of a largenumber of blocks are stored in other memory blocks dedicated to suchoverhead information and which do not contain user data. Suchinformation of the memory array that affects a number of blocks, such asthe identification of bad columns, is stored in yet other memory blocksin order to minimize the memory space that is required for suchinformation. In either case, the overhead information for a given blockis read from these other blocks as part of the process of accessing thegiven block to either read data from it or program data into it. Theblock overhead information is usually read by the controller prior toaccessing the block to read or write user data.

FIG. 8 illustrates a few such block overhead data records 151-157 thatare stored together in a single memory array block in the format of FIG.4. That is, the multiple overhead records of other blocks form the data147 of a sector of overhead data that includes the flag byte 145 and ECCbytes 149 generated from the overhead data 147. The block in which theoverhead data sector is stored also includes the spare bytes 151 ofcells for replacing any cells within a defective column. This sector ofoverhead data and the block in which it is stored have the samecharacteristics, and are written and read the same, as described abovefor user data sectors. The primary difference is the nature of the data147. In a specific example, each such overhead record contains fourbytes of data, resulting in 128 such records being combined togetherinto each defined sector of overhead data.

FIG. 9 illustrates example contents of a block overhead record for agood user data block. Byte 0 contains flags including an indication thatthe user data block is a good one. Byte 1 specifies a voltage forerasing the user data block, and byte 2 a programming voltage. These twovoltages are updated over the life of the memory system by thecontroller in response to the subject user data block requiring anincreasing number of erasing or programming pulses to reach the desiredrespective erase and programmed states. The controller uses thisinformation when erasing or programming, respectively, the subject userdata block for which the record 151 contains overhead data. Byte 3 ofthe overhead data record indicates the extent of use of the subject userdata block, either as an experience count that is updated each time thesubject user data block is erased and reprogrammed or as thecharacteristics of one or more tracking cells that are put through thesame number of erase and reprogramming cycles as their correspondinguser data block. The use of such tracking cells, preferably associatedwith each of at least the blocks of the memory array designated to storeuser data, is described in aforementioned U.S. patent application Ser.No. 08/910,947. Data in byte 3 is periodically rewritten as the numberof cycles of use increase or as the characteristics a tracking cellchange significantly. The value of byte 3 is used to determine when theassociated user data block needs to be retired from service. Use oftracking cells, rather than an experience count, has a significantadvantage that the overhead sector data need be rewritten far lessfrequently, as little as just a few times over the lifetime of thememory array, rather than after each erase/program cycle.

FIG. 10 illustrates an overhead record for a user data block that hasexceeded its useful lifetime or otherwise has been determined by thecontroller to be a defective block. The flag byte indicates that theblock is defective and a spare block has been assigned to take itsplace. (Not to be confused with the flag byte 145 (FIG. 4) that is atthe beginning of the individual data sectors.) The other three bytes ofthe record specify, as part of the current user data block overheaddata, the spare block's address. Thus, the three bytes used for a goodblock to specify its operating parameters (FIG. 9) are efficiently usedfor this other purpose for a defective block. This minimizes the numberof bytes required for the overhead data. When the controller reads thisrecord as part of the process of accessing its user data block, it isquickly determines that the addressed block is defective and the addressof the spare block provided in the record of FIG. 10 is then used by thecontroller to address and access the spare user data block.

This arrangement of blocks thus requires that a number of spare blocksbe provided in addition to the number of user data blocks necessary tofill the address space specified for the memory array. The overheadrecords for these blocks designate their status as spares in the flagbyte, and whether they are good or defective spare blocks. If a goodspare block, the record contains the same bytes 1-3 as the record ofFIG. 9. If a defective spare block, the bytes 1-3 need not contain anyoverhead information of the block since it will never be used.

Any defects of the memory cell array that affect many blocks of cells,such as defective columns as can occur when a bit line has a shortcircuit to some other element, are stored in other blocks in order tocompact the block overhead records. An example shown in FIG. 11 is a badcolumn pointer (BCP) table stored as data in a block having the dataformat of FIG. 4. Such a table is made during the testing phase of thememory system manufacturing process. In this example, up to four BCPs oftwo bytes each may be stored for each of the memory cell units 0-7.Since eight spare bytes of cells are included as spares 151 in a typicaluser data block (FIG. 4), two bytes of cells may be skipped in a singleblock in response to the controller reading one BCP from the table ofFIG. 11. If there are more than four bad columns in a unit, that unit isidentified as defective and not used. The memory system may operate solong as at least one unit remains usable. Alternatively, since thecolumn lines of each unit may be segmented, some number of BCPs, such astwo, may be stored for each segment or for individual groups ofsegments. It does, of course, take more memory to store an expanded BCPtable.

During operation of the memory, the BCP table of FIG. 11 and as manyoverhead data blocks of FIGS. 8-10 as space allows, are read from thememory blocks by the controller into its RAM 29 (FIG. 1) withoutdeleting that overhead data from the non-volatile memory. This is doneupon initialization of the memory system and, if there is not enoughroom in the RAM 29 for all of the block overhead sectors of data, thosethat are less frequently accessed by the controller are deleted from theRAM 29 in favor of those that need to be accessed. Since this data canbe read much faster by the controller from its own RAM 29 than from anon-volatile memory block, the “caching” of such data in the controllermemory speeds up the process of accessing non-volatile memory blockscontaining user data since the overhead data must also be accessed.

The controller 11 may access a number of user data sectors in responseto receipt from a host system of a command containing an address, suchas a in a cylinder/head/sector format, as in a disk drive, or as alogical block. The controller then calculates a logical address of abeginning block corresponding to the beginning sector address providedby the host. The memory system address space for a given array chip maybe expressed as a continuum of logical block addresses (LBAs) thatrepresent all available blocks on the chip in its good memory units forstoring user data. The block overhead records are logically arranged inthat same order. The controller then first reads the block overheadrecord in its RAM 29 that corresponds to the first data sector specifiedby the host while a physical address within the memory array of the userdata block is being calculated from its LBA. After accessing the firstuser data block and its overhead information, the logical block addressneed not be recalculated for each subsequent block that is addressed fordata of the particular file. A simple counter will step through theoverhead records that have been organized in the order of theirrespective user data blocks. If all of the necessary overhead recordsare not in the controller's RAM 29 at the time of this access, therequired overhead data sectors are preferably first read from thenon-volatile memory into the RAM 29, including those of substituteblocks whose addresses are contained in the initial overhead records.

One advantage of storing the block overhead data in records separatefrom the block is the reduced number of times that such records must berewritten. In the present embodiment, the overhead blocks of data neednot be rewritten frequently, perhaps only two or three times during thelifetime of the memory system and some times not at all. Any change tothe overhead information record for one block is held as long aspossible in a controller memory before rewriting the overhead datasector in which record exists, and then it can be done in the backgroundwithout being part of an erase or programming cycle. But when theoverhead data of a block is stored in that block, the overhead data mustbe reprogrammed each time the block is erased. In the examples describedherein where only one sector of user data is stored in a block, overheaddata would have to be rewritten in one block every time a sector of userdata is written into that memory block. This can also require theoverhead information to be written twice into the same block, oncebefore writing the user data and once after doing so, in order tocompensate for effects due to programming adjacent cells, particularlywhen being programmed in multiple states where the tolerance of sucheffects is less.

Although the memory system examples being described store only onesector of user data in each of the individual blocks, various aspects ofthe present invention apply equally well where two or more sectors ofdata, each with its flag and ECC bytes, are stored in individual blocksof the memory cell array.

FIG. 12 provides an example utilization of the individual blocks of amemory array chip having eight units of blocks. The same bootinformation is stored in a specified block of each of the units, usuallythe first block. Upon initialization of the system, the controllerfirmware causes the first block of unit 0 to be read but if that blockis not readable or its stored data corrupted, the first block of unit 1is accessed for reading, and so on, until valid memory system bootinformation is read by the controller. It is then stored in thecontroller RAM 29. There are also a number of reserved blocks, such asreserved blocks 0-7 being shown in FIG. 12, in which data desirable foroperation of the memory array chip are stored. A copy of the data ofeach of the reserved blocks is provided in a different memory unit thanthe primary copy as insurance against a defective unit. The data formatof each of the reserved blocks is that illustrated in FIG. 4.

Part of the boot information is a physical address of reserved block 0and its copy, which, in a specific example, contains the bad columnpointers of FIG. 11, an identity of any unusable unit(s), and physicalmapping characteristics including which of the blocks of good units arereserved, those designated for user data, those designated for overheaddata (“O.H. Data”) according to FIGS. 8-10, and those designated asspare blocks. Reserved block 0 also contains read and write controlparameters particular to its memory array chip.

The other reserved sectors contain information that is useful to thecontroller to operate the memory array chip on which they are located,or useful to the entire memory system. Reserved block 1, for example,can contain data of system parameters that appears on only the firstlogical memory array chip of the system, including a specification ofthe data interface 13 of the controller with the host system. Anotherreserved block may contain manufacturing information, for example. Thedata stored in the boot information and reserved blocks are written aspart of the manufacturing process. This data may be made modifiableafter manufacture, either in part or in total.

FIG. 13 illustrates a desired step in the manufacturing configurationprocess. Data about each memory array chip is read by the controller 11from the reserved sector 0 of each chip and assembled into a common fileillustrated in FIG. 14 that is then written back into reserved sector 2of the first logical chip 17 of the memory system. This process can beprovided by firmware included in the program memory 27 (FIG. 1) of thecontroller. Upon invoking this firmware routine during the systemconfiguration, data of the number of good user data blocks is read fromeach of the system's memory chips. That information then becomes a partof the system record of FIG. 14. Logical block address (LBA) ranges arealso added to that record, the first user block of the first logicalmemory chip 17 being assigned an address of 0000. The ending LBA is alsorecorded as part of the record, being the beginning LBA of zero plus thenumber of user data blocks on the first chip. The logical memory spacefor the next memory chip 19 is noted by its number of good user datablocks and its ending LBA, which is one more than the ending LBA of thefirst memory chip plus the number of good user data blocks in the secondchip. This process continues until the table of FIG. 14 is completed forall the memory array chips.

In a specific example, the entry in the table of FIG. 14 for each memorychip in the system includes a one byte physical chip number and threebytes for the ending LBA. This results in the merged system LBA tablebeing very short and quick to access. When accessing a particular userdata block of the system in response to an address from a host system,as a particular example, the controller 11 first calculates acorresponding logical block address. That LBA is then compared with thetable (FIG. 14) in reserved block 2 of the first logical memory chip 17to determine on which of the chips the addressed block lies. The LBA isof the immediately preceding logical chip is then subtracted from thecalculated LBA. The physical block address on that chip is thencalculated by the controller reading the designated chip's reservedsector 1 information to shift this differential LBA into a correspondingblock of the designated chip that has been designated for user datastorage.

In addition to storing a record of the number of good units and sectorsfrom which the merged table of FIG. 14 is formed, each of the memoryarray chips includes other information about its respective array thatthe controller uses to operate it. This other information can also bestored in the reserved sector 0 of each chip array. Another feature ofthe present invention is that multiple array chips that are usedtogether with a common controller in one system need not each have thesesame characteristics. The controller 11 preferably reads thecharacteristics stored in reserve sector 0 of an individual chip intoits RAM 29 before accessing that chip. This can be once when the memorysystem in initialized, provided the controller RAM 29 is large enough,and then accessed from RAM during operation of the memory. Alternately,this information can read from a particular chip just before it isaccessed each time and then stored in the RAM 29 only during the time ofsuch access. It is a significant advantage to be able to form a memorysystem with two or more memory chips that have different operatingcharacteristics. This greatly simplifies the manufacturing process sincememory chips from different process batches, different foundries,different manufacturers, and so on, can be combined to operate welltogether. Testing of the chips in order to batch together those havingthe same values of these characteristics is no longer necessary.

These characteristics that can be different among memory chips includevarious optimal voltages and timing, as well as minimum and maximumpermitted values, for use to program, read, erase, scrub and refresh thechip. The optimal number of programming pulses, their durations,frequency and magnitudes, as well as operating characteristics ofvoltage pumps on the chip, including ranges of maximum and minimumvalues can also be included. The number of sectors per unit and otherinformation needed by the controller to translate a logical blockaddress to a physical one within the particular chip are also stored.Pointers to spare units and blocks within units may also be included.Other information includes pointers to the physical locations of thereserved sectors so that they need not all be stored in the same blocksin each memory chip of a system. The number of user data blocks forwhich data is included in each of the overhead blocks (FIG. 8) can alsobe stored. Inclusion of the bad column pointers (BCPs) in reservedsector 0 has already been described. A duplicate set of certainoperating parameters can be also be included for different chip supplyvoltages, such as 3 and 5 volts. The controller can then tailor itsaccess to match the characteristics of each chip in the system, whichneed not, as a result, be made the same.

The flag byte 145 (FIG. 4) of a sector of data is described with respectto FIG. 15. In a specific example, the most significant bits 0 and 1 ofthat byte give a factor by which all the following bits in that sectorare transformed. These two bits are preferably randomly selected duringthe writing process for each sector of data by the micro-controller 23or fixed logic such as a state machine, prior user data of the sectorbeing read into the data stream 101 (FIG. 5). Alternatively, thetransformation bits may be assigned by sequencing through all thepossible combinations in order. These transformation bits are positionedat the beginning of the remaining flag bits, which are in turn insertedinto the stream of data prior to the user data and ECC bytes that formthe sector being stored. The purpose of so transforming the data storedin the flash memory is to cause the memory cells to be programmed todifferent states for the same data. This prevents uneven wear of thevarious blocks of the memory that can occur over the life of the memory,such as when substantially the same data file is repetitively written tothe same group of blocks. When the data sector is read, these transformbits are first read and then used to transform the raw data read fromthe memory back to the data that was originally received by the memoryfor storage. Two transform bits are used for a four state memoryoperation, more being used when the number of storage states of theindividual memory cells is made higher. If the memory is operating in atwo state mode, however, only one transformation bit is used.

FIG. 16 illustrates an example process of transforming received databefore being stored in the flash memory. This process can be carried outprimarily by the micro-controller 23 under the control of its firmware,or can be executed by the use of adder circuits and related digitalelements. Each byte of data from the buffer 35 has its bits separatedinto four pairs, and each bit pair is combined in respective adders175-178 with the two bit transform (for a four state flash memory) thatis held at 181. The transformed bit pairs are then recombined into asingle byte that is applied to one input of a multiplexer 183. Thesetransform bits are also used to transform, in adders 185-187, six fillbits indicated at 189. The transform bits themselves are combined withthe transformed fill bit pairs to form the first byte 145 (FIG. 4) of adata sector, that is applied to a second input of the multiplexer 183. Acontrol signal in a line 191 then switches the multiplexer 183 to outputin circuits 193 successive bytes of data wherein the first byte of thesector is in the form of FIG. 15 received through the multiplexer 1input and subsequent bytes of transformed data are received through the0 input until the entire sector of data is transformed and sent to theflash memory. It is this transformed data, rather that the raw datareceived from the host, that is subjected to the BCP processing and ECCgeneration of FIG. 6A.

An inverse transform takes place when the sector of data is read fromthe flash memory, as illustrated in FIG. 17. Four subtraction elements195-198 receive respective pairs of bits of a data byte received in thepath 194 form the flash memory. The two transform bits for theparticular data sector are stored at 199, which may be a register. Thetransform bits, which are the first two bits of the first byte receivedfor the sector, are stored at 199 in response to receiving the firstbyte control signal in the line 191. These two bits are combined witheach of the received byte pairs in the subtracting elements 195-198 in amanner to transform them back to the raw received data. The inversetransform of the sector data after the first two bits commencesimmediately after those transform bits are read. There is certainly noneed to read the transform bits in a separate operation. The remaining 6bits of the first byte are immediately transformed by its three pairspassing through three of the subtracting elements 195-198 and then beingstored at 201 in response to the control signal in the line 191. Assubsequent bytes of the data sector are received, one at a time, thecontents at 199 and 201 remain unchanged while the inverse transform ofthe data bytes is made and the result output to the buffer memory 35over a circuit 203. This output data is then the same as that which wasinitially received by the memory system and stored in a transformedform.

The least significant bits 4-7 of the flag byte 145 illustrated in FIG.15 are used by the controller to determine whether a block is erased ornot. In one example of a memory system, the erased state is also one ofthe programmed states, so some care needs to be taken to distinguishbetween them. When necessary to determine whether a block in this typeof system is erased from the data in the block, therefore, the samplingof one bit of data, for example, cannot itself provide the answer.Therefore, in one example, fill bits 189 (FIG. 16) that are written intothe first byte of a data sector are either a fixed known pattern or madeto have a pattern that assures those bits are not all equal to the valueof the erased state. The controller reads any data sector in the blockand looks for whether the pre-erase bits 173 stored in the correspondingcells of the block either are the fixed values of the fill bits 189 or,if there is no known pattern, at least one of them (and preferably more)is in a programmed state that is not the erased state. As a furthercheck, it may be determined whether an ECC code is present in the datasector. If either or both of these conditions are determined to exist,it is concluded that the block is not erased. But if the bit values ofdata read from the flag byte bit locations 4-7 and/or the ECC all havethe same value equal to that of the erased state, this indicates thatthe block is in its erased state.

Although specific examples of various aspects of the present inventionhave been described, it is understood that the present invention isentitled to protection within the scope of the appended claims.

1. A method of operating a re-programmable non-volatile memory systemhaving an array of memory cells organized into distinct blocks thatindividually include a number of simultaneously erasable memory cellscapable of storing a particular quantity of data, the distinct memorycell blocks being further organized into a plurality of sub-arrays,comprising: receiving and temporarily storing in a buffer memory atleast a given number of sectors of user data to be programmed into thememory system, moving data from one of the given number of sectors ofuser data in the buffer at a time to a respective one of a plurality ofstorage registers at a time, wherein moving data additionally comprisesgenerating a redundancy code from the user data of the individualsectors and adding the generated code to the user data from which theyare generated, and thereafter moving the user data and the redundancycodes generated therefrom from the plurality of storage registers inparallel to respective ones of a plurality of memory cell blocks thatare located within different ones of the plurality of sub-arrays.
 2. Themethod according to claim 1, wherein moving the data additionallycomprises moving the data through a dedicated electronic circuitprovided as part of the memory system for generating the redundancycode.
 3. The method according to claim 1, wherein generating theredundancy code comprises: separately storing intermediate results of aredundancy code calculation for the individual sectors of data, andcombining the stored intermediate results with additional results of theredundancy code calculation for the same individual sectors.
 4. Themethod according to claim 1, wherein moving the user data and theredundancy codes to the plurality of memory cell blocks comprises movingsaid user data and redundancy codes to the plurality of memory cellblocks within the plurality of sub-arrays that are located on a commonintegrated circuit.
 5. The method according to claim 1, wherein the userdata and the redundancy codes generated therefrom are moved into theplurality of memory cell blocks without data of information related tophysical characteristics of the plurality of memory cell blocks or theiroperation.
 6. The method according to claim 1, additionally comprisingstoring, in one or more of the distinct memory cell blocks other thanthe plurality of memory cell blocks, data of information related tophysical characteristics of the plurality of memory cell blocks or theiroperation.
 7. The method according to claim 6, wherein storing data ofinformation related to physical characteristics of the plurality ofmemory cell blocks or their operation comprises storing an indication ofwhether any of the plurality of memory cell blocks is defective.
 8. Themethod of claim 7, wherein, if any of the plurality of memory cellblocks is defective, storing data of information related to the physicalcharacteristics of the plurality of memory cell blocks or theiroperation additionally comprises storing an address of another of thedistinct memory cell blocks as a substitute for the defective memorycell block.
 9. The method according to claim 7, wherein storing data ofinformation related to physical characteristics of the plurality ofmemory cell blocks or their operation comprises storing data of usagecharacteristics of the plurality of memory cell blocks.
 10. The methodaccording to claim 6, wherein storing data of information related tophysical characteristics of the plurality of memory cell blocks or theiroperation comprises storing data of any of programming, reading, eraseor wear characteristics of the plurality of memory cell blocks.
 11. Themethod according to claim 6, wherein the memory cells within theplurality of memory cell blocks are individually operated with more thantwo storage states in order to store more than one bit of data permemory cell, and wherein the memory cells within the one or more of thedistinct memory cell blocks other than the plurality of memory cellblocks are individually operated with exactly two storage states inorder to store exactly one bit of data per memory cell.
 12. The methodaccording to any one of claims 1-10, wherein the memory cells within atleast the plurality of memory cell blocks are individually operated withmore than two storage states in order to store more than one bit of dataper memory cell.
 13. The method according to any one of claims 1-11,wherein the memory system in which the method of operation is carriedout is enclosed in a portable memory card having electrical contactsthereon accessible from outside the memory card for removably engagingmating contacts of a connector through which the user data are received.14. A method of operating a memory system having a plurality ofre-programmable non-volatile memory cells organized into distinct blocksof memory cells that are simultaneously erasable, comprising:designating a first group of said blocks for storing user data and asecond group of said blocks for storing information of physicalcharacteristics of said first group of blocks or their operation,storing, in individual ones of the first group of said blocks, user dataplus information of at least one characteristic of the user data beingstored therein, by simultaneously writing the user data plus informationof said at least one characteristic of the user data into a plurality ofblocks in the first group of blocks until at least a different sector ofthe user data plus the information of said at least one characteristicof the different sector of user data are written into each of theplurality of blocks in the first group, and storing, in individual onesof the second group of said blocks, information of physicalcharacteristics of the first group of blocks or their operation thatdoes not include either user data or information of said at least onecharacteristic of the user data.
 15. The method of claim 14, wherein theinformation of said at least one characteristic of the user data that isstored along with sectors of data includes redundancy codes that havebeen generated from the user data while the user data is beingtransferred to the plurality of the first group of blocks, individualones of the redundancy codes being added to the user data from whichthey are generated.
 16. The method of claim 15, wherein the redundancycodes are generated in a dedicated electronic circuit provided as partof the memory system for all of the plurality of the first group ofblocks to which sectors of user data and redundancy codes generatedtherefrom are simultaneously being transferred.
 17. The method of claim14, wherein the information of said at least one characteristic of theuser data that is stored along with sectors of data includes one or morebits that indicate any transformation of the user data within the datasector before being stored.
 18. The method according to claim 14,wherein storing information of physical characteristics of the firstgroup of blocks or their operation comprises storing an indication ofwhether any of the first group of blocks is defective.
 19. The methodaccording to claim 18, wherein, if any of the plurality of memory cellblocks is defective, storing data of information of physicalcharacteristics of the first group of blocks or their operationadditionally comprises storing an address of another of the blocks as asubstitute for the defective block.
 20. The method according to claim18, wherein storing information of physical characteristics of the firstgroup of blocks or their operation comprises storing data of usagecharacteristics of the first group of blocks.
 21. The method accordingto claim 14, wherein storing information of physical characteristics ofthe first group of blocks or their operation comprises storing data ofany of programming, reading, erase or wear characteristics of the firstgroup of blocks.
 22. The method according to any one of claims 14-21,wherein the memory cells within the first group of blocks areindividually operated with more than two storage states in order tostore more than one bit of data per memory cell, and the memory cellswithin the second group of blocks are individually operated with exactlytwo storage states in order to store exactly one bit of data per memorycell.
 23. The method according to any one of claims 14-21, wherein thememory cells within at least the first group of blocks are individuallyoperated with more than two storage states in order to store more thanone bit of data per memory cell.
 24. The method according to any one ofclaims 14-21, wherein the memory system in which the method of operationis carried out is enclosed in a portable memory card having electricalcontacts thereon accessible from outside the memory card for removablyengaging mating contacts of a connector through which the user data arereceived.